Researchers from Soochow University, Beijing Graphene Institute, and Xiamen Silan Advanced Compound Semiconductor Co., Ltd. have joined forces to conduct an extensive review, offering a thorough examination of the advancements made in utilizing graphene as a buffer layer for nitride epitaxial growth. With a focus on progress and potential applications, their collaborative effort aims to shed light on the significant role that graphene can play in this field.
In this comprehensive study, the researchers delve into the multifaceted aspects of graphene’s application as a buffer layer. By providing a systematic overview, they seek to offer a detailed understanding of the current state of research and highlight the promising avenues for further exploration.
The use of graphene as a buffer layer holds immense potential in the realm of nitride epitaxial growth. Nitride semiconductors, such as gallium nitride (GaN), have gained considerable attention due to their unique properties and wide range of applications, including optoelectronic devices, high-power electronics, and solid-state lighting. However, the growth of high-quality nitride films on foreign substrates remains a challenge due to the significant mismatches in lattice parameters and thermal expansion coefficients.
Graphene, a two-dimensional carbon allotrope with exceptional electrical, mechanical, and thermal properties, has emerged as a promising solution to address these challenges. Acting as a buffer layer, graphene can efficiently accommodate the lattice mismatch between the substrate and the nitride film, thereby enhancing the quality of epitaxial growth.
The researchers highlight various techniques employed in the growth of graphene buffer layers, including chemical vapor deposition (CVD), epitaxial growth, and transfer methods. They discuss the optimization strategies utilized to enhance the quality and uniformity of graphene layers, ensuring their suitability for nitride epitaxy.
Furthermore, the study emphasizes the significant advances achieved in controlling the doping level and polarity of graphene buffer layers. Manipulating these factors enables the researchers to tailor the electronic properties of the graphene layer, making it even more compatible with nitride film growth.
The potential applications of graphene as a buffer layer for nitride epitaxial growth are far-reaching. The researchers explore its utilization in various optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes (LDs), where high-quality nitride films are crucial for efficient operation. Additionally, they discuss its potential use in high-power electronics, where the superior thermal conductivity of graphene can enhance device performance.
In conclusion, this collaborative review by researchers from Soochow University, Beijing Graphene Institute, and Xiamen Silan Advanced Compound Semiconductor Co., Ltd. offers a comprehensive examination of the progress and potential applications of graphene as a buffer layer for nitride epitaxial growth. By providing a systematic overview, the study highlights the importance of graphene in addressing the challenges associated with foreign substrate growth of nitride films. With its exceptional properties and controllable characteristics, graphene holds great promise for revolutionizing the field of nitride epitaxy and enabling the development of advanced optoelectronic and high-power electronic devices.
