Professor Soo-Hyun Kim, from the Graduate School of Semiconductors Materials and Devices Engineering and the Department of Materials Science and Engineering at UNIST, is spearheading a team of researchers who have achieved remarkable advancements in the precise manipulation of precious metals through atomic layer deposition (ALD). The incorporation of elements such as Ruthenium (Ru), Iridium (Ir), Platinum (Pt), and Palladium (Pd) has been successfully controlled using this innovative technique.
ALD has emerged as a vital process in the field of material engineering, allowing for the precise deposition of thin films with atomic-scale control. This method involves sequentially exposing a substrate to different precursor gases, ensuring the formation of uniform layers. By leveraging ALD, scientists aim to enhance the performance of various electronic devices, including transistors and sensors, by effectively incorporating precious metals into their structures.
The team led by Professor Kim has tackled the challenge of precisely controlling the integration of Ru, Ir, Pt, and Pd into thin films using ALD. Their groundbreaking research not only demonstrates their expertise in the field but also highlights the potential for significant advancements in electronic device technology.
By accurately adjusting the ALD process parameters, the researchers successfully incorporated the desired precious metals into the thin films with exceptional precision. This level of control is critical as even slight deviations in the amount or distribution of these metals can significantly impact the functionality and performance of electronic devices. Therefore, the ability to manipulate the deposition process at an atomic level opens up new possibilities for optimizing the performance of various applications.
Such advancements hold great promise for the semiconductor industry. For instance, Ruthenium, known for its excellent electrical conductivity and catalytic properties, can significantly improve the efficiency and reliability of electronic components. Furthermore, Iridium, Platinum, and Palladium are renowned for their exceptional chemical stability and catalytic activity, making them ideal candidates for a wide range of applications, including catalysis and energy conversion.
Professor Kim’s team has not only succeeded in precisely incorporating these precious metals but has also demonstrated the scalability of the ALD process. This means that the developed technique can be applied to large-scale production, potentially revolutionizing the manufacturing processes for electronic devices.
The team’s achievements represent a significant step forward in the field of material engineering and have far-reaching implications for various industries. The ability to control the incorporation of precious metals at an atomic level through ALD opens up exciting possibilities for enhancing the performance and functionality of electronic devices. As Professor Kim and his team continue their groundbreaking research, it is expected that their findings will contribute to significant advancements in the semiconductor industry, fueling innovation and driving progress in the field.
