Two-dimensional transition-metal dichalcogenides (2D TMDs), specifically MoS2, have emerged as key players in the realm of next-generation 2D materials. Extensive endeavors are underway in the industrial sector to achieve large-scale production of these materials while maintaining satisfactory performance levels for electronic device applications. In the context of display applications, a charge carrier mobility of 2 cm2/V.s is generally deemed adequate.
The field of 2D materials has garnered significant attention due to their exceptional properties and potential applications across various industries. Unlike traditional three-dimensional materials, 2D materials possess a thickness that is orders of magnitude smaller, resulting in unique electrical, optical, and mechanical characteristics. Among the myriad of 2D materials, transition-metal dichalcogenides have stood out, with MoS2 being particularly prominent.
MoS2, composed of molybdenum and sulfur atoms arranged in a layered structure, exhibits remarkable properties that make it an excellent candidate for electronic device applications. Its inherent semiconducting nature, combined with its exceptional mechanical flexibility and stability, has propelled MoS2 to the forefront of material research and development.
To leverage the full potential of MoS2 and other 2D TMDs, efforts are being directed towards scaling up their production on an industrial level. The goal is to overcome the challenges associated with synthesizing these materials in large quantities while ensuring consistent quality and performance. This pursuit is driven by the growing demand for electronic devices that rely on efficient and reliable materials for optimal functionality.
In the realm of display applications, one crucial parameter for assessing the suitability of a material is its charge carrier mobility. Charge carrier mobility refers to the ability of charge carriers, such as electrons or holes, to move through a material under the influence of an electric field. For display applications, a charge carrier mobility of 2 cm2/V.s is generally considered sufficient. This value ensures that the material enables efficient electron or hole transport, thereby facilitating the desired display functionality.
The focus on achieving a charge carrier mobility of 2 cm2/V.s underscores the need to strike a balance between performance and scalability. While it is crucial to produce these materials in large quantities to meet market demands, it is equally important to maintain their desirable electrical properties. Therefore, researchers and engineers are actively exploring innovative synthesis methods, such as chemical vapor deposition and physical vapor deposition, to achieve the desired quality and scalability simultaneously.
In conclusion, the pursuit of industrial-scale production for 2D TMDs, particularly MoS2, reflects the immense potential and growing importance of these materials in electronic device applications. The target charge carrier mobility of 2 cm2/V.s for display applications serves as a benchmark, emphasizing the need to optimize both performance and scalability. By striking this delicate balance, researchers aim to unlock the full capabilities of 2D TMDs, paving the way for advanced electronic devices that exhibit enhanced functionality and reliability.
